Samsung Electronics, a global leader in advanced memory technology, recently hosted its annual Memory Tech Day, introducing groundbreaking innovations and new memory products set to drive advancements in various applications, including the cloud, edge devices, and automotive vehicles.
The event, attended by approximately 600 customers, partners, and industry experts, served as a platform for Samsung executives to present their vision for “Memory Reimagined.” This vision encompasses long-term plans for maintaining memory technology leadership, insights into market trends, and sustainability objectives.
The event also featured the introduction of new product innovations, including HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD.
Jung-Bae Lee, President and Head of Memory Business at Samsung Electronics, delivered a keynote address in which he elaborated on Samsung’s strategy for overcoming the challenges of the hyperscale era. He discussed innovations in new transistor structures and materials, highlighting upcoming 3D structures for sub-10-nanometer DRAM, set to offer larger single-chip capacities exceeding 100 gigabits. Furthermore, Samsung is working on its next-generation 11nm-class DRAM, aiming to provide the industry’s highest density.
Samsung is working on its next-generation 11nm-class DRAM, aiming to provide the industry’s highest density
Samsung is also making significant strides in NAND flash technology. Their efforts to shrink cell sizes and refine channel hole etching techniques are on track to usher in 1,000-layer vertical NAND (V-NAND). The company is preparing for mass production of its ninth-generation V-NAND based on a double-stack structure, which is set to provide the industry’s highest layer count.
In the era of hyperscale AI, Jung-Bae Lee emphasized the potential for great leaps forward, driven by innovation and collaboration with customers and partners. He stated, “Through endless imagination and relentless perseverance, we will continue our market leadership by driving innovation and collaborating with customers and partners to deliver solutions that expand possibilities.”
Introducing HBM3E ‘Shinebolt’
One of the standout products introduced at the event is HBM3E Shinebolt, the next-generation HBM3E DRAM designed to power advanced AI applications. With a remarkable speed of 9.8 Gbps per pin, Shinebolt can achieve transfer rates exceeding 1.2 TBps. It promises to enhance total cost of ownership and accelerate AI-model training and inference in data centers.
To cater to the evolving landscape of AI technologies, Samsung introduced various memory solutions for edge devices. These solutions support high-performance, high-capacity, low-power, and small form factors, including the industry’s first 7.5Gbps LPDDR5X CAMM21. Samsung also showcased its 9.6Gbps LPDDR5X DRAM, LLW2 DRAM for on-device AI, next-generation Universal Flash Storage (UFS), and the high-capacity Quad-Level Cell (QLC) SSD BM9C1.
With the increasing demand for high-bandwidth, high-capacity memory in autonomous driving solutions, Samsung unveiled its Detachable AutoSSD. This innovative SSD allows data access from a single SSD to multiple System on Chips (SoCs) via virtual storage. The Detachable AutoSSD offers a sequential read speed of up to 6,500 MBps and can hold 4TB of data, providing easier upgrades and adjustments for vehicle users and manufacturers.
Technology That Makes Technology Sustainable
Samsung is also committed to sustainability and is working on ultra-low-power memory technologies to reduce power consumption in data centers, PCs, and mobile devices. They plan to use recycled materials in portable SSD products and aim to reduce energy usage for server systems through solutions like the PBSSD.
In collaboration with stakeholders across the semiconductor value chain, Samsung’s semiconductor business is actively contributing to addressing global climate issues through its sustainability initiative, “technology that makes technology sustainable.”
To learn more about Samsung Semiconductor’s solutions and Samsung Memory Tech Day 2023, please visit: https://semiconductor.samsung.com/events/techday-memory-2023/. A recap of the event will be posted at a later date.
Source: Samsung
Recent Comments